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Ordering number : EN6920C
MCH6613
Power MOSFET
30V, 0.35A, 3.7 Ω –30V, –0.2A, 10.4 Ω , Complementary Dual MCPH6
Features
http://onsemi.com
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The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting
Excellent ON-resistance characteristic
1.5V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
Conditions
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
N-channel
30
±10
0.35
1.4
0.8
P-channel
--30
±10
--0.2
--0.8
Unit
V
V
A
A
W
Channel Temperature
Storage Temperature
Tch
Tstg
150
--55 to +150
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7022A-006
Device
MCH6613-TL-E
Package
MCPH6
SC-88, SC-70-6, SOT-363
Shipping
3,000
pcs./reel
memo
Pb-Free
6
2.0
5
4
0.15
MCH6613-TL-E
Packing Type : TL
Marking
0 to 0.02
FM
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Source1
2 : Gate1
6
5
4
1
2
3
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
1
2
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71013 TKIM TC-00002962/71112 TKIM/52506PE MSIM TB-00002278/52101 TSIM TA-324 No.6920-1/8
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